, ljna. 20 stern ave. springfield, new jersey 07081 u.sa silicon npn power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 MJ16016 description ? collector-emitter sustaining voltage- : vceoous) = 450v(min) ? high switching speed applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25c) thermal characteristics symbol vcev vceo(sus) vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation@tc=25c junction temperature storage temperature value 850 450 6 20 30 10 20 250 200 -65-200 unit v v v a a a a w 'c 'c symbol rth j-c parameter thermal resistance, junction to case max 0.7 unit ?c/w 3 i pin 1.6ase 1 f 2 better "*n 3. collect or (case) 2 to-3 package . f ? a - f*-n-?) t t !_ i 1 c 17 v-, a t i ??!)?? d i pl xt/l^x / i ^n^ ^/ ' 'm33 imiii dim mm max a 3900 b 25.30 36.67 c 9.3fl 11.10 d 0.90 1 .10 e 2.90 lid g 109? k 546 k 1140 13.50 l 1675 17.05 h 19.40 19.62 0 4.00 4.20 0 30 00 30 20 v 430 4.50 : ?ran i ? f nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJ16016 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vee(sat) icev icer iebo hpe cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain output capacitance conditions lc=100ma;lb=0 lc= 10a; ib= 1a ic=15a;ib=1.5a lc=15a;lb=1.5a,tc=10crc lc=15a; ib=1.5a lc=15a; ib=1.5a,tc=100'c vcev=850v;vbe(off)=1 -5v vcev=850v;vbe(offr1.5v;tc=100'c vce= 850v; rbe= 50 q ,tc= 100"c veb= 6v; lc=0 lc= 20a ; vce= 5v ie=0; vcb=10v;ftest=1.0khz min 450 7 typ. max 2.5 3.0 3.0 1.5 1.5 0.25 1.5 2.5 1.0 500 unit v v v v ma ma ma pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc= 15a , vcc= 250v, rb2= 1 -6 q ir,,,? 1 ra-tr,.,? **a p\a/? "^fiii c duty cycle=2.0% 20 200 900 100 50 500 2200 250 ns ns ns ns
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